t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 1 of 9 2n6756, 2n6758, 2n6760 and 2n6762 available on commercial versions n- channel mosfet qualified per mil - prf - 19500/ 542 qualified levels : jan, jantx , and jantxv description this family of 2n67 56 , 2n6758, 2n6760 an d 2n 6 76 2 switching transistors are military qualified up to the jan txv level for high - reliability applications . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. to - 20 4aa ( to -3) package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 67 56 , 2n6758, 2n6760 and 2n 6 76 2 number series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/ 542 . (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applica tions / benefits ? l ow - profile metal can design. ? military and other high - reliability applications. maximum ratings @ t a = +25oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance ju nction - to - case r ? jc 1.67 o c/w total power dissipation @ t a = +25 c @ t c = + 25 c (1) p t 4 75 w drain - source voltage, dc 2n6756 2n6758 2n6760 2n6762 v ds 100 200 400 500 v gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc (2) 2n67 56 2n67 58 2n6 76 0 2n676 2 i d1 14.0 9.0 5.5 4.5 a drain current, dc @ t c = +100 oc (2) 2n6756 2n6758 2n6760 2n6762 i d2 9.0 6.0 3.5 3.0 a off - state current (peak total value) (3) 2n6756 2n6758 2n6760 2n6762 i dm 56 36 22 18 a source current 2n6756 2n6758 2n6760 2n6762 i s 14.0 9.0 5.5 4.5 a notes featured on next page. downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 2 of 9 2n6756, 2n6758, 2n6760 and 2n6762 notes: 1. derated linearly by 0.6 w/oc for t c > +25 oc . 2. the following formula derives the maximum theoretical id limit. id is limit ed by package and internal wires and may be limited by pin diameter : 3. i dm = 4 x i d1 as calculated in note 2. mechanical and packaging ? case: to - 3 metal can. ? terminals: solder dipped (sn63/pb37) over nickel plated alloy 52. rohs compliant matte - tin plating is available on commercial grade only . ? marking: manufacturer's id, part n umber, d ate c ode . ? weight: approximately 12.7 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n67 56 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & definitions symbol defin ition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i d drain c urrent i f forward c urrent r g gate d rive i mpedance t c case temperature v dd drain s upply v oltage v ds drain s ource v oltage v gs gate s ource v oltage downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 3 of 9 2n6756, 2n6758, 2n6760 and 2n6762 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character istics drain - source breakdown voltage v gs = 0 v, i d = 1.0 ma 2n67 56 2n675 8 2n676 0 2n676 2 v (br)dss 100 200 400 500 v gate - source voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125c v ds v gs , i d = 0.25 ma, t j = - 55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125c i gss1 i gss2 100 200 na dra in current v gs = 0 v, v ds = 80 v v gs = 0 v, v ds = 160 v v gs = 0 v, v ds = 320 v v gs = 0 v, v ds = 400 v 2n6756 2n6758 2n6760 2n6762 i dss1 25 a drain current v gs = 0 v, v ds = 100 v, t j = +125 c v gs = 0 v, v ds = 200 v, t j = +125 c v gs = 0 v, v ds = 400 v, t j = +125 c v gs = 0 v, v ds = 500 v, t j = +125 c 2n6756 2n6758 2n6760 2n6762 i dss2 1.0 ma drain current v gs = 0 v, v ds = 80 v, t j = +125 c v gs = 0 v, v ds = 160 v, t j = +125 c v gs = 0 v, v ds = 320 v, t j = +125 c v gs = 0 v, v ds = 40 0 v, t j = +125 c 2n6756 2n6758 2n6760 2n6762 i dss3 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 6.0 a pulsed v gs = 10 v, i d = 3.5 a pulsed v gs = 10 v, i d = 3.0 a pulsed 2n6756 2n6758 2n6760 2n6762 r ds(on)1 0.18 0.40 1.00 1.50 ? static drain - source on - state resistance v gs = 10 v, i d = 14.0 a pulsed v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 5.5 a pulsed v gs = 10 v, i d = 4.5 a pulsed 2n6756 2n6758 2n6760 2n6762 r ds(on)2 .21 .49 1.22 1.80 ? static drain - source on - state resistance t j = +125c v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 6.0 a pulsed v gs = 10 v, i d = 3.5 a pulsed v gs = 10 v, i d = 3.0 a pulsed 2n6756 2n6758 2n6760 2n6762 r ds(on)3 0.34 0.8 2.2 3.3 ? diode forward voltage v gs = 0 v, i d = 14.0 a pulsed v gs = 0 v, i d = 9.0 a pulsed v gs = 0 v, i d = 5.5 a pulsed v gs = 0 v, i d = 4.5 a pulsed 2n6756 2n6758 2n6760 2n6762 v sd 1.8 1.6 1.5 1.4 v downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 4 of 9 2n6756, 2n6758, 2n6760 and 2n6762 electrical characteristics @ t a = +25 c, unless other wise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 14 .0 a, v ds = 8 0 v v gs = 10 v, i d = 9.0 a, v ds = 16 0 v v gs = 10 v, i d = 5.5 a, v ds = 320 v v gs = 10 v, i d = 4 .5 a, v ds = 40 0 v 2n67 56 2n67 58 2n6 76 0 2n6 76 2 q g(on) 35 39 39 40 nc gate to source charge v gs = 10 v, i d = 14.0 a, v ds = 8 0 v v gs = 10 v, i d = 9.0 a, v ds = 16 0 v v gs = 10 v, i d = 5.5 a, v ds = 32 0 v v gs = 10 v, i d = 4.5 a, v ds = 40 0 v 2n6756 2n6758 2n6760 2n6762 q gs 10 5.7 6.0 6.0 nc gate to drain charge v gs = 10 v, i d = 14.0 a, v ds = 8 0 v v gs = 10 v, i d = 9.0 a, v ds = 16 0 v v gs = 10 v, i d = 5.5 a, v ds = 32 0 v v gs = 10 v, i d = 4.5 a, v ds = 40 0 v 2n6756 2n6758 2n6760 2 n6762 q gd 15 20 20 20 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 14 .0 a, v gs = +10 v, r g = 7.5 ? , v dd = 50 v i d = 9.0 a, v gs = +10 v, r g = 7.5 ? , v dd = 100 v i d = 5.5 a, v gs = +10 v, r g = 7.5 ? , v dd = 200 v i d = 4 .5 a, v gs = +10 v, r g = 7.5 ? , v dd = 250 v 2n6756 2n6758 2n6760 2n6762 t d(on) 35 35 30 30 ns rinse time i d = 14.0 a, v gs = +10 v, r g = 7.5 ? , v dd = 50 v i d = 9.0 a, v gs = +10 v, r g = 7.5 ? , v dd = 100 v i d = 5.5 a, v gs = +10 v, r g = 7.5 ? , v dd = 200 v i d = 4.5 a, v gs = +10 v, r g = 7.5 ? , v dd = 250 v 2n6756 2n6758 2n6760 2n6762 t r 80 80 40 40 ns turn - off delay time i d = 14.0 a, v gs = +10 v, r g = 7.5 ? , v dd = 50 v i d = 9.0 a, v gs = +10 v, r g = 7.5 ? , v dd = 100 v i d = 5.5 a, v gs = +10 v, r g = 7.5 ? , v dd = 200 v i d = 4.5 a, v gs = +10 v, r g = 7.5 ? , v dd = 250 v 2n6756 2n6758 2n6760 2n6762 t d(off) 60 60 80 80 ns fall time i d = 14.0 a, v gs = +10 v, r g = 7.5 ? , v dd = 50 v i d = 9.0 a, v gs = +10 v, r g = 7.5 ? , v dd = 100 v i d = 5.5 a, v gs = +10 v, r g = 7.5 ? , v dd = 200 v i d = 4.5 a, v gs = +10 v, r g = 7.5 ? , v dd = 250 v 2n6756 2n6758 2n6760 2n6762 t f 45 40 35 30 ns diode reverse recovery time di/dt = 100 a/s, v dd 3 0 v, i d = 14 .0 a di/dt = 100 a/s, v dd 3 0 v, i d = 9.0 a di/dt = 100 a/s, v dd 3 0 v, i d = 5.5 a di/dt = 100 a/s, v dd 3 0 v, i d = 4 .5 a 2n6756 2n6758 2n6760 2n6762 t rr 300 500 700 900 ns downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 5 of 9 2n6756, 2n6758, 2n6760 and 2n6762 graphs t 1 , rectangle pulse duration (sec ond s) figure 1 thermal response curves thermal response (z jc ) downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 6 of 9 2n6756, 2n6758, 2n6760 and 2n6762 graphs (continued) figure 2 maximum drain current vs case temperature t c case temperature (oc) t c case temperature (oc) for 2n67 56 for 2n6758 t c case temperature (oc) t c case temperature (oc) for 2n6760 for 2n6762 i d drain current (amperes) i d drain current (amperes) i d drain current (amperes) i d drain current (amperes) downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 7 of 9 2n6756, 2n6758, 2n6760 and 2n6762 graphs (continued) figure 3 safe operating area v ds , drain - to - source voltage (volts) for 2n6756 v ds , drain - to - source voltage (volts) for 2n6758 i d drain current (amperes) i d drain current (amperes) downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 8 of 9 2n6756, 2n6758, 2n6760 and 2n6762 graphs (continued) figure 3 safe operating area v ds , drain - to - source vo ltage (volts) for 2n6760 v ds , drain - to - source voltage (volts) for 2n6762 i d drain current (amperes) i d drain current (amperes) downloaded from: http:///
t4 - lds - 0111, rev . 3 (12 1465 ) ?201 2 microsemi corporation page 9 of 9 2n6756, 2n6758, 2n6760 and 2n6762 package dimensions note: 1. dimensi ons are in inches. 2. millimeters are given for general information only. 3. these dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. when gauge is not used measurement will be made at the se ating plane. 4. the seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. mounting holes shall be deburred on the seating plane side. 6. drain is electrically connected to the case. 7. in accordance with asme y14.5m, diameters are equivalent to x symbology . schematic dim inches millimeters notes min max min max a - .875 - 22.23 b .060 .135 1.52 3.43 c .250 . 36 0 6.35 9.14 d .312 .500 7.92 12.70 d2 - .050 - 1.27 e .038 .043 0.97 1.09 dia. f .131 .188 3.33 4.78 r adius g 1.177 1.197 29.90 30.40 h .655 .675 16.64 17.15 j .205 .225 5.21 5.72 3, 5 k .420 .440 10.67 11.18 3, 5 l .495 .525 12.57 13.34 r adius m .151 .161 3.84 4.09 dia . downloaded from: http:///
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